ATP206
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
ATP206 datasheet
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МаркировкаATP206
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ПроизводительSanyo Semiconductor
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ОписаниеON Semiconductor ATP206 Mfr Package Description: HALOGEN FREE, ATPAK-3 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: SINGLE Number of Terminals: 2 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 40 A DS Breakdown Voltage-Min: 40 V Avalanche Energy Rating (Eas): 26 mJ Drain-source On Resistance-Max: 0.0160 ohm Pulsed Drain Current-Max (IDM): 120 A
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Количество страниц4 шт.
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Форматы файлаHTML, PDF
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